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BandPass Academy Amateur radio licence exam practice

Units published 16/31 Built 28 Sep 2026

E2 · Published 28 September 2026 ·

Semiconductor Devices: Which One, and Why That One

Extra class device questions are about selection. Given a job - switch this RF path, tune this oscillator, amplify this weak signal - a small set of semiconductor types each solve it in a particular way, and knowing the reason is what the exam asks for.

  • Band 70 cm
  • Study time 18
  • Level Core
  • questions 10
Waveform and antenna diagram for Advanced Circuits and Devices
Advanced Circuits and Devices — waveform overlay and radiation pattern

Pre-flight briefing

Two families of transistor

The bipolar junction transistor is a current-controlled device: a small base current allows a much larger collector current to flow, and its transconductance is high, which makes it the classic choice for low-noise RF amplifiers and for power stages up to a few hundred megahertz. Its input impedance is low and its performance falls as junction capacitance comes to dominate at higher frequencies.

The field-effect transistor is voltage-controlled: a voltage on the gate controls the current between source and drain, and because the gate is a reverse-biased junction or an insulated layer, the input impedance is very high. The MOSFET is the workhorse of HF and VHF power amplifiers because it is easy to bias, tolerant of mismatch and available in devices that will dissipate hundreds of watts. Its drawback is gate capacitance, which limits gain at the highest frequencies, and a susceptibility to damage from static and from excessive gate voltage.

Gallium arsenide and gallium nitride devices extend this further. GaAs FETs and MMICs - monolithic microwave integrated circuits, complete amplifiers on a single chip - are standard above 1 GHz, and GaN devices handle far more power per unit of die area than silicon, which is why they have taken over high-power microwave and pulsed applications.

Diodes that are not rectifiers

Several diode types do jobs that have nothing to do with converting AC to DC. The varactor is a diode operated in reverse bias, where the depletion region acts as a voltage-controlled capacitor; that is how a synthesised transceiver's VCO is tuned and how a phase-locked loop locks to a reference. The PIN diode has an intrinsic layer between the p and n regions, and at RF it behaves as a current-controlled resistor: with no bias it is nearly an open circuit, with forward current it is a few ohms, which makes it ideal for RF switching, attenuators and T/R switching in a transceiver.

The Zener diode is designed to break down at a precise reverse voltage and is used as a voltage reference and as a simple regulator; the avalanche breakdown is non-destructive as long as the current is limited. The tunnel diode exploits negative resistance to amplify and oscillate at microwave frequencies, and the step recovery diode generates the sharp pulses used in frequency multipliers and comb generators.

Analog and digital building blocks

An operational amplifier is a high-gain differential amplifier with a very high input impedance, and its behaviour is set almost entirely by the feedback network around it - gain, bandwidth, input and output impedance all follow from the resistors and capacitors you connect. That is why a single op-amp type can serve as an audio preamplifier, an active filter or an RF amplifier at low frequencies.

Digital logic comes in families with different trade-offs. TTL is fast and consumes a fairly constant current per gate; CMOS consumes almost nothing while static and draws current only during transitions, which makes it the choice for battery equipment but also makes it vulnerable to static discharge and requires unused inputs to be tied to a defined level. Above a few hundred megahertz, the same functions are implemented in gallium arsenide or in a programmable logic device.

Every one of these devices has a maximum junction temperature, and that - together with the thermal resistance from junction to case and from case to heat sink - is what limits how much power a given device can handle. A device with a good heat sink dissipates far more than the same device standing in free air, which is why power amplifier design is as much about thermal engineering as about the circuit.

Terms you must be able to define
TermWhat the examiner wants to hear
VaractorA reverse-biased diode whose capacitance varies with applied voltage, used for tuning.
PIN diodeA diode with an intrinsic layer that acts as a current-controlled RF resistor for switching and attenuation.
MOSFETA voltage-controlled field-effect transistor, common in HF and VHF power amplifiers.
MMICMonolithic microwave integrated circuit: a complete amplifier fabricated on one chip.
CMOSComplementary metal-oxide-semiconductor logic, drawing current only during switching.

Question deck 10 questions

E1B01 Recall

What is the essential difference between a bipolar transistor and a field-effect transistor?

E1B02 Core

What is an advantage of a MOSFET over a bipolar transistor in an HF power amplifier?

E1B03 Core

What is a varactor diode used for?

E1B04 Core

Why is a PIN diode useful as an RF switch?

E1B05 Core

What is a Zener diode normally used for?

E1B06 Core

What determines the gain and bandwidth of a circuit built around an operational amplifier?

E1B07 Stretch

Why does CMOS logic consume very little power when it is not switching?

E1B08 Core

What is an MMIC?

E1B09 Stretch

What sets the limit on how much power a transistor can dissipate?

E1B10 Stretch

What is a tunnel diode used for?